absolute maximum ratings thermal and mechanical characteristics power mos 8 ? is a high speed, high voltage n-channel switch-mode power mosfet. a proprietary planar strip design yields excellent reliability and manufacturability. low switching loss is achieved with low input capacitance and ultra low c rss "miller" capaci- tance. the intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low emi and reliable paralleling, even when switching at very high frequency. reliability in yback, boost, forward, and other circuits is enhanced by the high avalanche energy capability. n-channel mosfet g d s single die mosfet unit a v mj a unit w c/w c v oz g inlbf nm ratings 33 20 173 30 1979 24 min typ max 543 0.23 0.15 -55 150 2500 1.03 29.2 10 1.1 parameter continuous drain current @ t c = 25c continuous drain current @ t c = 100c pulsed drain current 1 gate-source voltage single pulse avalanche energy 2 avalanche current, repetitive or non-repetitive characteristic total power dissipation @ t c = 25c junction to case thermal resistance case to sink thermal resistance, flat, greased surface operating and storage junction temperature range rms voltage (50-60hhz sinusoidal wavefomr from terminals to mounting base for 1 min.) package weight terminals and mounting screws. symbol i d i dm v gs e as i ar symbol p d r jc r cs t j ,t stg v isolation w t torque typical applications ? pfc and other boost converter ? buck converter ? two switch forward (asymmetrical bridge) ? single switch forward ? flyback ? inverters features ? fast switching with low emi/rfi ? low r ds(on) ? ultra low c rss for improved noise immunity ? low gate charge ? avalanche energy rated ? rohs compliant s o t -2 2 7 isotop ? file # e145592 "ul recognized" g s s d APT32M80J 800v, 33a, 0.19 max APT32M80J microsemi website - http://www.microsemi.com 050-8168 rev b 5-2009
static characteristics t j = 25c unless otherwise speci ed dynamic characteristics t j = 25c unless otherwise speci ed 1 repetitive rating: pulse width and case temperature limited by maximum junction temperature. 2 starting at t j = 25c, l = 6.9mh, r g = 25 , i as = 24a. 3 pulse test: pulse width < 380 s, duty cycle < 2%. 4 c o(cr) is de ned as a xed capacitance with the same stored charge as c oss with v ds = 67% of v (br)dss . 5 c o(er) is de ned as a xed capacitance with the same stored energy as c oss with v ds = 67% of v (br)dss . to calculate c o(er) for any value of v ds less than v (br)dss, use this equation: c o(er) = -8.27e-7/v ds ^2 + 1.01e-7/v ds + 1.43e-10. 6 r g is external gate resistance, not including internal gate resistance or gate driver impedance. (mic4452) microsemi reserves the right to change, without notice, the speci cations and information contained herein. unit v v/c v mv/c a na unit s pf nc ns min typ max 800 1.41 0.16 0.19 3 4 5 -10 100 500 100 min typ max 43 9326 159 927 438 217 303 51 155 53 76 231 67 test conditions v gs = 0v , i d = 250 a reference to 25c, i d = 250 a v gs = 10v , i d =24a v gs = v ds , i d = 2.5ma v ds = 1200v t j = 25c v gs = 0v t j = 125c v gs = 30v test conditions v ds = 50v , i d = 24a v gs = 0v , v ds = 25v f = 1mhz v gs = 0v , v ds = 0v to 533v v gs = 0 to 10v , i d = 24a, v ds = 400v resistive switching v dd = 533v , i d = 24a r g = 2.2 6 , v gg = 15v parameter drain-source breakdown voltage breakdown voltage temperature coef cient drain-source on resistance 3 gate-source threshold voltage threshold voltage temperature coef cient zero gate voltage drain current gate-source leakage current parameter forward transconductance input capacitance reverse transfer capacitance output capacitance effective output capacitance, charge related effective output capacitance, energy related total gate charge gate-source charge gate-drain charge turn-on delay time current rise time turn-off delay time current fall time symbol v br(dss) ? v br(dss) / ? t j r ds(on) v gs(th) ? v gs(th) / ? t j i dss i gss symbol g fs c iss c rss c oss c o(cr) 4 c o(er) 5 q g q gs q gd t d(on) t r t d(off) t f source-drain diode characteristics g d s unit a v ns c v/ns min typ max 32 173 1.0 1000 20 10 test conditions mosfet symbol showing the integral reverse p-n junction diode (body diode) i sd = 24a , t j = 25c, v gs = 0v i sd = 24a, v dd = 100v 3 di sd / dt = 100a/ s, t j = 25c i sd 24a, di/dt 1000a/ s, v dd = 100v, t j = 125c parameter continuous source current (body diode) pulsed source current (body diode) 1 diode forward voltage reverse recovery time reverse recovery charge peak recovery dv/dt symbol i s i sm v sd t rr q rr dv/dt 050-8168 rev b 5-2009 APT32M80J
typical performance curves APT32M80J 0 40 80 120 160 200 0 0.4 0.8 1.2 1.6 0 200 400 600 8 0 10 100 1,000 10,000 0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 0 10 20 30 40 50 60 0 5 10 15 20 25 30 35 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 25 50 75 100 125 150 0 10 20 30 40 50 60 0 5 10 15 20 25 30 35 0 10 20 30 40 50 60 70 80 90 100 0 5 10 15 20 25 30 10 & 15v 4v v ge = 10v t j = 55c t j = 150c v ds , drain-to-source voltage (v) figure 1, output characteristics i d , drain current (a) t j = 25c t j = 125c v ds , drain-to-source voltage (v) figure 2, output characteristics i d , drain current (a) t j , junction temperature (c) figure 3, r ds(on) vs junction temperature r ds(on) , drain-to-source on resistance i d , drain current (a) figure 5, gain vs drain current g fs , transconductance v gs , gate-to-source voltage (v) figure 4, transfer characteristics i d , drain current (a) v ds , drain-to-source voltage (v) figure 6, capacitance vs drain-to-source voltage c, capacitance (pf) v sd , source-to-drain voltage (v) figure 8, reverse drain current vs source-to-drain voltage i sd , reverse drain current (a) 0 2 4 6 8 10 12 0 100 200 300 q g , total gate charge (nc) figure 7, gate charge vs gate-to-source voltage v gs , gate-tosource voltage (v) 4.5v 5.5v 6 & 6.5v 5v t j = 125c v ds > i d(on) x r ds(on) max. 250 sec. pulse test @ <0.5 % duty cycle t j = 55c t j = 25c t j = 125c normalized to v gs = 10v @ 24a t j = 125c t j = 25c t j = -55c c oss c iss c rss v ds = 480v v ds = 120v v ds = 300v i d = 33a t j = 150c t j = 25c 050-8168 rev b 5-2009
31.5 (1.240) 31.7 (1.248) dimensions in millimeters and (inches) 7.8 (.307) 8.2 (.322) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 14.9 (.587) 15.1 (.594) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) hex nut m4 (4 places) 0.75 (.030) 0.85 (.033) 12.6 (.496) 12.8 (.504) 25.2 (0.992) 25.4 (1.000) 1.95 (.077) 2.14 (.084) * source drain gate * r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) w=4.1 (.161) w=4.3 (.169) h=4.8 (.187) h=4.9 (.193) (4 places) 3.3 (.129) 3.6 (.143) * source emitter terminals are shorted internally. current handling capability is equal for either source terminal. sot-227 (isotop ? ) package outline microsemi?s products are covered by one or more of u.s. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,5 03,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157, 886 6,939,743 7,342,262 and foreign patents. us and foreign patents pending. all rights reserved. 0 0.05 0.10 0.15 0.20 0.25 10 -5 10 -4 10 -3 10 -2 10 1.0 -1 0.1 1 10 100 1000 1 10 100 1000 0.1 1 10 100 1000 1 10 100 1000 1ms 100ms r ds(on) scaling for different case & junction temperatures: i d = i d(t c = 25 c) *( t j - t c )/125 dc line 100 s i dm 10ms 13 s 100 s i dm 100ms 10ms 13 s r ds(on) dc line t j = 150c t c = 25c 1ms 0.5 single pulse 0.1 0.3 0.7 0.05 d = 0.9 peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: t 1 = pulse duration i d , drain current (a) v ds , drain-to-source voltage (v) figure 10, maximum forward safe operating area z jc , thermal impedance (c/w) rectangular pulse duration (seconds) figure 11. maximum effective transient thermal impedance junction-to-case vs pulse duration i d , drain current (a) v ds , drain-to-source voltage (v) figure 9, forward safe operating area t j = 125c t c = 75c 050-8168 rev b 5-2009 APT32M80J
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